Lines Matching refs:to
27 * Block Flash Memory, it is rather specific to LART. With
30 * trivial to adapt to other platforms.
60 * These values is specific to 28Fxxxx3 flash memory.
68 * These values is specific to 28Fxxxx3 flash memory.
76 * These values are specific to LART
217 * block boundaries, so we don't need to worry about address
305 * too much damage. Since we need to write 1 dword to memory,
306 * we're f**cked if this happens to be DRAM since we can't
347 /* wait for block erase to finish */
385 * the requested erase. Actually, to save on the calculations,
386 * we skip to the first erase region which starts after the
407 * as before, drop back one to point at the region in which
481 * Write one dword ``x'' to flash memory at offset ``offset''. ``offset''
500 /* wait for the write to finish */
521 static int flash_write (struct mtd_info *mtd,loff_t to,size_t len,size_t *retlen,const u_char *buf)
527 printk (KERN_DEBUG "%s(to = 0x%.8x, len = %d)\n",__FUNCTION__,(__u32) to,len);
534 if (to + len > mtd->size) return (-EINVAL);
537 if (to & (BUSWIDTH - 1))
539 __u32 aligned = to & ~(BUSWIDTH - 1);
540 int gap = to - aligned;
550 to += n;
558 if (!write_dword (to,*((__u32 *) buf))) return (-EIO);
560 to += BUSWIDTH;
574 if (!write_dword (to,*((__u32 *) tmp))) return (-EIO);
635 printk ("%s: This looks like a LART board to me.\n",module_name);